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| Cell Casting | 사출 PMMA | 강화유리 | |
|---|---|---|---|
| 표면경도(Coating 후) | 8H이상 | 6H | 9H이상 |
| 내 충격성(Grade) | 낮음 ( >사출PMMA) | 낮음 | 높음 |
| 내열 온도 | 120°c | 90°c | 200°c 이상 |
| 가공 용이성 | 높음 | 높음 | 낮음 |
| 투과율 | 92% | 92% | 90% ~ 91% |
| 가격 | 중간 | 낮음 | 높음 |
※An Example Comparison - for OLB Applications
| Comparision | Conventional ACF | Trillion Fixed Array ACF |
|---|---|---|
| Min. Bonding Area | 6,000 um² | 6,000 um² |
| Average Particles Density | 11,000 / mm² | 7,000 / mm² |
| No. of Particles in 6,000 um² (before bonding) |
66 | 42 |
| Particles Capture Rate on Electrodes | 15% | 35% |
| No. of Particles Capture on 6,000 um² Electrode (after bonding) |
~ 10 High Standard Deviaition |
~ 15 Low Standard Deviaition |
| Cluster of Particles Observed: on electrode n gap (spacing) |
Yes Yes |
Negligible to None Negligible to None |
| No. of Particles Accumulated in A Gap of: 6,000 um² 10,000 um² |
122 166 |
69 97 |
| Undersirable Particles Density Accumulated in A Gap of: 6,000 um² 10,000 um² |
20,333 / mm² 16,600 / mm² |
11,550 / mm² 9,700 / mm² |
※An Example Comparison - for COG Applications
| Comparision | Conventional ACF | Trillion Fixed Array ACF |
|---|---|---|
| Min. Bonding Area | 1,000 um² | 1,000 um² |
| Average Particles Density | 55,000 / mm² | 25,000 / mm² |
| No. of Particles in 1,000 um² (before bonding) |
55 | 25 |
| Particles Capture Rate on Electrodes | 15% | 36% |
| No. of Particles Capture on 1,000 um² Electrode (after bonding) |
8 High Standard Deviaition |
9 Low Standard Deviaition |
| Cluster of Particles Observed: on electrode n gap (spacing) |
Yes Yes |
Negligible to None Negligible to None |
| No. of Particles Accumulated in A Gap of: 1,000 um² 600 um² |
102 81 |
41 31 |
| Undersirable Particles Density Accumulated in A Gap of: 1,000 um² 600 um² |
101,750 / mm² 135,000 / mm² |
41,000 / mm² 50,000 / mm² |
